PatentDe  


Dokumentenidentifikation EP0917283 25.01.2007
EP-Veröffentlichungsnummer 0000917283
Titel Aktiver Gegentaktmischer mit hoher Linearität
Anmelder Northrop Grumman Corp., Los Angeles, Calif., US
Erfinder Kobayashi, Kevin Wesley, Torrance, CA 90503, US
Vertreter derzeit kein Vertreter bestellt
DE-Aktenzeichen 69836613
Vertragsstaaten DE, FR, IT
Sprache des Dokument EN
EP-Anmeldetag 29.10.1998
EP-Aktenzeichen 981201858
EP-Offenlegungsdatum 19.05.1999
EP date of grant 13.12.2006
Veröffentlichungstag im Patentblatt 25.01.2007
IPC-Hauptklasse H03D 7/14(2006.01)A, F, I, 20051017, B, H, EP

Beschreibung[en]
BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to mixers and more particularly to low power mixers with improved linearity (IP3) performance.

2. Description of the Prior Art

Mixers are used in many commercial applications including commercial wireless applications, such as cellular telephones, cordless phones, global positioning systems and PCMCIA computer interface applications. Such applications require relatively high linearity (IP3) performance, a low noise figure and good isolation performance for frequencies less than 6 GHz. Such mixers also need to operate at relatively low dc voltages for example, less than 3.6 volts dc. Mixers used in portable dc electronics are required to have low dc power consumption to maximize battery life and also need to be relatively small in size. Many known mixers fail to accomplish all of these performance objectives.

Known Gilbert cell mixers can provide positive conversion gain, and good isolation and are relatively small area and are adapted to be monolithically integrated. Unfortunately, such known Gilbert cell mixers require relatively large amounts of dc current and power to achieve a fraction of the linearity performance of known Schottky diode mixer designs. In addition, such Gilbert cell mixers typically require about 2.5-3 VBE supply voltage in order to provide a reasonable linearity performance.

Conventional Schottky diode active mixer designs provide for relatively high linearity, good isolation and conversion loss performance while dissipating little or no dc power. However, conventional Schottky mixers which employ passive baluns consume relatively large areas, especially at frequencies < 2 GHz and are limited to about an octave of bandwidth.

Schottky diode mixers with active baluns are also known, for example as disclosed copending U.S. Patent Application, serial no. 08/500725, filed on 7/11/95 issued as US 5,678,225 and "A Novel HBT Active Transformer Balanced Schottky Diode Mixer", by K. Kobayashi, 1996 IEEE MMT-S Dig., San Diego, CA, hereby incorporated by reference. Such mixers are configured with a active balun topology to form a double balanced mixer which provides for relatively lower power supply voltage operation and higher linearity performance than known Gilbert cell mixers while maintaining a positive conversion gain, a relatively low LO drive requirement and double balanced multi-decade frequency performance. Such mixers also provide good amplitude and antiphase balance of < ± 1dB and < ± 6° up to 5 GHz. Moreover, such mixers are also adapted to be monolithically integrated as a monolithic microwave integrated circuit (MMIC).

Referring to FIG. 3, the active balun mixer disclosed in the above mentioned patent application includes a Schottky diode ring quad and two active baluns. Each balun includes a single ended 50 ohm RF/LO input which includes a resistor R1, a transistor Q5 and current source I4. A mirror leg which includes a resistor R2, transistor Q6 and current source I5 is used to create a differential signal which drives a differential amplifier formed from the transistors Q1, Q2, a pair of low resistors RL1, RL2, and an emitter degeneration resistor Re, and current sources I1 and I2. The outputs of the collectors Q1 and Q2 provide the balanced antiphase complementary outputs. The emitter degeneration resistor Re is adapted to be adjusted to increase the input power handling range of the differential output amplifier as well as the conversion gain bandwidth performance. The values of the load resistors RL1 and RL2 are selected such that the product RL*I > the turn on voltage of the Schottky diodes. In this manner, the balun can be driven by a large LO source which has enough voltage to switch on the Schottky diodes under large signal operation. Because the active LO and RF baluns are directly coupled to the Schottky diode ring-quad, the voltage product RL*I must be the same for both the RF and LO active baluns so that the diodes of the Schottky diode ring-quad are biased with 0 voltage bias in the absence of the RF and LO signals. This design constraint must be maintained in order to reserve the dc balance of the Schottky diodes as well as the active baluns. The IF center-tap is formed of a pair of transistors Q3 and Q4, configured as followers, and a current source I3. The transistors Q3, Q4 combined in-phase IF signals at their emitters. The active balun is self-biased through a single supply voltage, Vcc.

One inherent limitation in such a topology is that it does not efficiently utilize the full tail current of the differential amplifier which drives the Schottky diode ring-quad which limits performance as discussed below. More particularly, when half of the Schottky diode ring is switched on by either of the LO or RF active balun drivers, the maximum current through the Schottky diodes is limited to half of the tail current of the differential amplifier switch driver. In fact, in practice the actual Schottky diode current is known to be less than half of this tail current. It is known that the higher the LO drive and thus the higher the switch current through the Schottky diodes of the ring-quad, the better the linearity performance, conversion gain and noise figure performance of a mixer. Thus, the inefficient use of the tail current to drive the Schottky diode ring-quad will lead to a less than optimum mixer conversion gain, noise figure and linearity performance for the amount of dc current consumed by the balanced drivers.

SUMMARY OF THE INVENTION

It is an object of the present invention to solve various problems in the prior art.

It is yet another object of the present invention to provide a relatively low power mixer with improved linearity performance per the amount of dc current consumed by the balanced driver.

The objects of the present invention are achieved by an active mixer according to claim 1 and an active balun according to claim 11.

Briefly the present invention relates to a low power mixer with improved linearity performance. The mixer, in accordance with the present invention includes first and second active baluns coupled to a Schottky diode ring. Each of the active baluns includes a complementary differential Schottky switch driver which enables the Schottky diode ring-quad to be switched with full tail current which provides relatively better linearity performance per dc power consumption than known Schottky diode double balanced mixers with active baluns.

DESCRIPTION OF THE DRAWINGS

These and other objects of the present invention will be readily understood with reference to the following specification and attached drawing wherein:

  • FIG. 1 is a block diagram of a double balanced Schottky ring-quad mixer with active baluns in accordance with the present invention.
  • FIG. 2 is a conceptional schematic balun transformer with IF center-tap.
  • FIG. 3 is a schematic diagram of a known HBT active balun.
  • FIG. 4 is a schematic diagram of a differential amp switch driver which illustrates the operation of the active balun mixer illustrated in FIG. 3.
  • FIG. 5 is a schematic diagram of a complementary differential amplifier Schottky switch driver which forms a portion of the active balun in accordance with the present invention.
  • FIG. 6 illustrates an alternate embodiment of the complementary differential Schottky switch driver circuit illustrated in FIG. 5 in accordance with an alternate embodiment of the present invention.

DETAILED DESCRIPTION

As will be discussed in more detail below, the double balanced active Schottky diode mixer in accordance with the present invention, generally identified with the reference numeral 20, and illustrated in FIG. 1, provides improved linearity performance relative to other known double balanced mixers which utilize active baluns per dc power consumption. Referring to FIG. 1, the double balanced active balun Schottky diode mixer 20 includes first and second active baluns 22 and 24 and a Schottky diode ring-quad 26. The active balun 22 includes an input port 28, which may be connected to an RF input RF IN and an intermediate frequency IF output port IF1 OUT 30. The active balun 22 further includes 0° and 180° outputs 32 and 34 which are coupled to a pair of nodes 36 and 38 of the Schottky diode ring-quad 26.

The active balun 24 similarly includes an input port 40, for example, for connection to a local oscillator input LO IN and an IF output port IF2 OUT 42. The active balun 24 further includes 0° and 180° outputs 44 and 46 that are connected to a pair of nodes 48 and 50 of the Schottky diode quad ring 26.

The Schottky diode quad ring 26 includes 4 Schottky diodes 52, 54, 56 and 58. A cathode of the Schottky diode 52 is connected to the anode of the Schottky diode 54 defining the junction 36. A cathode of the Schottky diode 54 is connected to the anode of the Schottky diode 56 forming the junction 48. A cathode of the Schottky diode 56 is connected to an anode of the Schottky diode 58 defining the junction 38. Finally, a cathode of the Schottky diode 58 is connected to an anode of the Schottky diode 52 defining the junction 50. As mentioned above, the junctions 36 and 38 of the Schottky diode ring-quad 26 are coupled to the 0° and 180° output of the active balun 22 while the junctions 48 and 50 are connected to the 0° and 180° outputs 44 and 46 of the active balun 24.

A conceptual schematic of a balun transformer with an IF center-tap is illustrated in FIG. 2. The balun transformer, generally identified with the reference numeral 60, is used to convert a single ended local oscillator (LO) or radio frequency (RF) input signals into two out of phase complementary signals for driving to vertices (junctions) of the Schottky diode ring quad 26. The transformer 60 is illustrated with a primary winding 62 and single secondary winding 64. A local oscillator (LO) or RF input is applied to one end of the primary winding 62 while the opposing end is grounded. The complementary 0° and 180° signals are available from the secondary winding 64. The secondary winding 64 is center-taped to provide an IF output port. As will be discussed in more detail below, the active baluns in accordance with the present invention are used to provide the same function of the balun transformer 60 but with improved gain and linearity performance.

The present invention is best understood with reference to the known active balun 66 illustrated in FIG. 3. As illustrated in FIG. 3, the known active balun 66 includes a single ended input stage 68 which includes a transistor Q5 and resistor R1 configured as an emitter follower. The active balun 66 further includes an in-phase IF center-tap combiner stage 70 which includes the transistors Q3 and Q4 and a differential amplifier Schottky switch driver, shown within the dashed box 72. In order to provide balanced operation, a second emitter follower or mirror leg stage 74, which includes a transistor Q6 and a resistor R2, is applied to the differential amplifier Schottky switch driver 72.

As shown, the differential amplifier Schottky switch driver 72 includes a pair of complementary differentially connected transistors Q1 and Q2 a pair of load resistors RL1, RL2 and an emitter degeneration resistor Re connected between the emitters of the transistors Q1 and Q2.

As mentioned above, the active balun 66 is unable to efficiently utilize the tail current of the differential amplifier driver 72 to switch the Schottky diode ring quad which results in decreased linearity performance per dc power consumption making a mixer with such an active balun unsuitable in many applications.

FIG. 4 illustrates an equivalent circuit of the differential amplifier Schottky switch driver 72 illustrated in FIG. 3 and generally identified with the reference numeral 76. As shown, complementary 0° and 180° outputs available at the collectors of the transistors Q1 and Q2 are shown connected to vertices or nodes 78 and 80 of a Schottky diode ring quad 82. The other two nodes 84 and 86 are driven by an identical differential amplifier Schottky switch driver not shown.

The differential amplifier Schottky switch driver 72 possesses a total tail current of I0 = I1 + I2. As illustrated, when a positive voltage is applied to the base of the transistor Q1 and a corresponding negative voltage to the base of the transistor Q2, both of which are generated by the input stage 68, 70 of the active balun 66, a current sink which forms the total tail current I0 is setup through the transistor Q1. Since there is no current drawn through the transistor Q2, the only current paths are the current IL through the load resistor RL1 and the ISchottky through the load resistor RL2 and the two series connected Schottky diodes d3 and d4. The sum of these currents IL and ISchottky is equal to the total tail current I0 of the differential amplifier. By applying Kirshoff's current law at the LO node, the current components for the current IL and Schottky current ISchottky are as provided in Equations (1) and (2) below: I L = I o / 2 + V schottky / R L I schottky = I o / 2 - V schottky / R L

where I0 is equal to the total tail current, I1+I2; Ischottky is the current through the on-switched Schottky diodes d3 and d4; VSchottky is the Schottky diode's turn-on voltage, RL is the load resistor of the differential amplifier; and IL is the current through the load resistor RL of the turned on transistor forming the current sink.

Equation 2 shows that the that the maximum current which can be switched through the Schottky diodes is only half of the total driver tail current I0/2. In practice, however, the ISchottky current will be much less than this by the amount of VSchottky/RL which becomes very substantial for low dc power operation. As such, Schottky current ISchottky is typically less than one fourth of the total tail current. Such inefficient use of the driver tail current will result in less than optimum linearity performance, conversion gain, and NF performance per unit dc power of the mixer.

Referring to FIG. 5, a differential amplifier Schottky switch driver, generally identified with the reference numeral 86, in accordance with the present invention improves the use of the tail current to improve the linearity performance of the mixer while providing for low power operation. The differential amplifier Schottky switch driver 86 is complementary configured and replaces the differential amplifier Schottky switch driver 72 illustrated in FIG. 3 in order to provide an active balun 88 with improved linearity performance and relatively low dc power operation. As shown in FIG. 6, the active balun 88, in accordance with the present invention, includes a single ended input stage 90 which includes a single ended input follower stage 90 which includes a resistor R1, for example, 50 ohm, and a transistor Q5, for example, a heterojunction bipolar transistor (HBT) and a current source I4, coupled to the emitter of the transistor Q5 by way of a level shifting resistor R3. The base of the transistor Q5 forms an input port 94 for receiving an RF/LO input. The emitter of the transistor Q5 provides one input to drive the complementary differential amplifier Schottky switch driver 86 in accordance with the present invention. The other input to the complementary differential amplifier Schottky switch driver 86 is from another emitter follower stage 96 which acts as a mirror leg which includes a complementary transistor Q6 and an input resistor R2. The complementary input stage also includes a current source I5 and a level shifting resistor R4. The current source I5 is used to create a differential signal which drives the complementary differential signal amplifier Schottky switch driver. The emitter output of the transistor Q6 is applied to the complementary differential amplifier Schottky switch driver 86 to provide balanced operation. The transistor Q6 may also be an HBT. The active balun 88 also includes an in-phase IF center-tap combiner 100. The center-tap combiner includes a pair of complementary connected transistors Q3 and Q4 and includes a center-tap which defines a IF output port 102.

In accordance with an important aspect of the invention, the complementary differential amplifier Schottky switch driver 86 makes efficient use of differential amplifier tail current in order to provide improved linearity performance and relatively low dc power operation. The complementary differential amplifier Schottky switch driver 86 includes a pair of differential input transistors Q1 and Q2 and a pair of complementary input transistors Q1p and Q2p. The emitters of the transistors Q1 and Q2 may be connected together by way of an emitter degeneration resistor Re. The collectors of the transistors Q1p, Q1 and Q2, and Q2p are connected together and form the 0° and 180° outputs which, are adapted to be applied to the Schottky diode ring quad 26 (FIG. 1). The collectors of the transistors Q1 and Q1p and Q2 and Q2p provide the balanced antiphase complementary outputs, the emitter degeneration resistors R and Rep can be adjusted to increase the input power handling range of the differential output amplifier as well as adjusting the conversion gain bandwidth performance. The emitters of the transistors Q1p and Q2p may also be connected together by way of a resistor Rep. The emitter outputs of the input stage 90 and follower stage 96 are connected to the bases of the transistor Q1 and Q2, which, in turn, are connected to the bases of the transistors Q1p and Q2p, respectively. The center-tap combiner stage 100 formed from the transistors Q3 and Q4 is connected to the complementary amplifier pairs Q1p, Q1, Q2 and Q2p. In particular, the base of the transistor Q3 is connected to the collectors of the transistors Q1p and Q1 and the 180° output for the switch driver 86. Similarly, the base of the transistor Q4 is connected to the collectors of the transistors Q2, Q2p to form the 0° output.

An equivalent circuit of the complementary differential amplifier Schottky switch driver 86, in accordance with the present invention, is illustrated in FIG. 5. As shown, the complementary differential amplifier Schottky switch driver 86 is connected to two vertices 104 and 106 of a Schottky diode ring quad 108. The other two vertices 110, 112 are adapted to be driven by an identical active balun not shown. As shown in FIG. 5, the complementary differential amplifier Schottky switch driver 86 utilizes a differential PNP amplifier 114, formed from the transistors Q1p and Q2p, an emitter degeneration resistor Rep connecting the emitters of the transistors Q1p and Q2p together, and two current sources I1p and I2p. The PNP differential amplifier 114 replaces the emitter resistors RL (FIG.4) of the conventional differential amplifier Schottky switch driver 72. In the configuration illustrated in FIG. 5, the total tail current of the PNP differential amplifier 114 is equal to the sum of the current source I1p and I2p, which is set equal to the total tail current Io. In the configuration illustrated in FIGS. 5 and 6, the base and collector of the transistors Q1p and Q1 are connected together.

Similarly, the base and collector of the transistors Q2p and Q2 are connected together. Such a configuration results in a unique complementary differential amplifier driver which pushes and pulls currents diagonally through the Schottky diode ring 26 (FIG 1). More particularly, as a positive voltage is applied to the base of the transistors Q1 and Q1p (FIG. 5), and a negative voltage is supplied to the base of the transistors Q2 and Q2p, the transistors Q1 and Q2p turn on, while the transistors Q1p and Q2 turn off. Current is thus pushed from Q2p through the diodes d4 and d3 and pulled through the transistor Q1, while the diodes d1 and d2 are both reversed bias (i.e. turned off). Conversely when a negative voltage is applied to the bases of the transistors Q1 and Q1p and a corresponding positive voltage is applied to the bases of the transistors Q2 and Q2p, the transistors Q2 and Q1p turn on while the transistors Q2p and Q1 turn off. In this mode.of operation, current is thus pushed from the transistor Q1p through the diodes d1 and d2 and pulled through the transistor Q2 while the diodes d3 and d4 are both reversed biased (i.e. turned off). In this manner, the Schottky diode ring quad 108 is switched with the full tail current Io, more than twice that achieved from the differential amplifier switch driver 72 illustrated in FIG. 4 which ultimately results in a higher linearity, conversion gain and lower noise figure performance per unit dc power for the actively balanced Schottky diode mixer. The active balun can be self biased through a single supply voltage Vcc.

The complementary differential amplifier Schottky switch driver 86 is used to form the active baluns 22 and 24 (FIG. 1) in order to provide a mixer 20 which has higher IP3 performance per dc power current consumed due to the more efficient use of the differential amplifier driver tail current estimated to be at least 3dB and more typically 6-10dB. The direct coupled topology allows operation of the mixer from dc to 6 GHz; a multi-decade frequency range. There are other benefits to the double balanced mixer 20 using the active baluns in accordance with the present invention. In particular, the mixer 20 provides positive conversion gain performance which reduces the number of amplifiers required and associated dc power consumption while also providing excellent balanced isolation performance that is relatively better than a passive double balance Schottky mixer making it suitable for direct conversion receiver applications. In addition, the active mixer topology, in accordance with the present invention, is adapted to be monolithically integrated in a relatively small size (i.e. <0.65x0.3mm2) area and requires low overhead voltage to operate i.e ≤ 2.5*VBE(≤3.3V) where HBT Gilbert cell mixers require ≈3*VBE (4.2V) using GaAs HBTs. The active mixer, in accordance with the present invention, is adaptable to be utilized in the existing systems using HBT Gilbert cell mixers.

Obviously, many modifications and variations of the present invention are possible in light of the above teachings. Thus, it is to be understood that, within the scope of the appended claims, the invention may be practiced otherwise than as specifically described above.


Anspruch[de]
Einen aktiver Mischer, umfassend: - einen ersten aktiven Balun (22), der einen ersten Eingangsanschluss (28), einen ersten Ausgangsanschluss (30) und ein erstes Paar von symmetrischen 0°- und 180°-Ausgängen (32, 34) definiert; - einen zweiten aktiven Balun (24), der einen zweiten Eingangsanschluss (40), einen zweiten Ausgangsanschluss (42) und ein zweites Paar von symmetrischen 0°- und 180°-Ausgängen (44, 46) definiert; und - einen Diodenring (26), der vier Dioden (52, 54, 56, 58) umfasst, die elektrisch mit dem ersten und dem zweiten Paar symmetrischer 0°- und 180°-Ausgänge gekoppelt sind; wobei der erste aktive Balun (22) einen ersten Komplementärdifferenzverstärker (86) umfasst, der ein Paar von ersten Differenzeingangstransistoren (Q1, Q2) und ein Paar von ersten Komplementäreingangstransistoren (Q1P, Q2P) umfasst, und wobei die Ausgänge des Komplementärdifferenzverstärkers je mit einer Diode des Diodenringes gekoppelt sind, wobei der erste aktive Balun (22) ferner eine erste Eingangsstufe (90), die den Einganganschluss (94) definiert, und eine Spiegelstufe (96) umfasst, die die an den Eingangsanschluss (94) angelegten Signale spiegelt, wobei die Eingangsstufe (90) und die Spiegelstufe (96) an die Differenzeingangstransistoren (Q1, Q2) angeschlossen sind. Der aktive Mischer nach Anspruch 1, wobei der zweite aktive Balun (24) einen zweiten Differenzverstärker (86) umfasst, der ein zweites Paar von Differenzeingangstransistoren (Q1, Q2) und ein zweites Paar von zweiten Komplementäreingangstransistoren (Q1P, Q2P) umfasst, wobei der zweite aktive Balun (24) ferner eine zweite Eingangsstufe (90), die den Eingangsanschluss (94) definiert, und eine Spiegelstufe (96) umfasst, die die an den Eingangsanschluss (94) angelegten Signale spiegelt, wobei die Eingangsstufe (90) und die Spiegelstufe (96) an die Differenzeingangstransistoren (Q1, Q2) angeschlossen sind. Der aktive Mischer nach Anspruch 1 oder 2, wobei die Dioden (52, 54, 56, 58) Schottky-Dioden sind. Der aktive Mischer nach einem der Ansprüche 1 bis 3, wobei die ersten Differenzeingangstransistoren (Q1, Q2) Hetero-Bipolartransistoren sind. Der aktive Mischer nach einem der Ansprüche 1 bis 4, wobei die Komplementäreingangstransistoren (Q1p, Q2P) Hetero-Bipolartransistoren sind. Der aktive Mischer nach Anspruch 1, wobei der erste Differenzverstärker (86) einen Reststrom definiert und derart ausgebildet ist, dass er im Wesentlichen den gesamten Reststrom I1 verwendet, um zwei der Dioden (52, 54, 56, 58) in dem Diodenring (26) zu schalten. Der aktive Mischer nach Anspruch 2, wobei der zweite Differenzverstärker (90) einen zweiten Reststrom I2 definiert und wobei der zweite Differenzverstärker (90) derart ausgebildet ist, dass er im Wesentlichen den gesamten Reststrom I2 verwendet, um die anderen zwei der Dioden (52, 54, 56, 58) in dem Diodenring (26) zu schalten. Der aktive Mischer nach einem der Ansprüche 2 bis 7, wobei der zweite Differenzverstärker (90) ein Komplementärdifferenzverstärker ist, der das Paar von Differenzeingangstransistoren (Q1, Q2) und das Paar von Komplementäreingangstransistoren (Q1P, Q2P) umfasst. Der aktive Mischer nach Anspruch 1, wobei die Differenzeingangstransistoren und die Komplementäreingangstransistoren (Q1P, Q2P) je eine Basis, einen Kollektor und einen Emitter umfassen, wobei die Basen und die Kollektoren eines jeden der Differenzeingangstransistoren und der Komplementäreingangstransistoren miteinander verbunden sind. Der aktive Mischer nach Anspruch 2, wobei die Differenzeingangstransistoren und die Komplementäreingangstransistoren (Q1P, Q2P) je eine Basis, einen Kollektor und einen Emitter umfassen, wobei die Basen und die Kollektoren eines jeden der Differenzeingangstransistoren und der Komplementäreingangstransistoren miteinander verbunden sind. Ein aktiver Balun, umfassend: - eine Eingangsstufe (100), die einen Eingangsanschiuss (94) und einen Spiegelzweig (96) zum Spiegeln von an den Eingangsanschluss (94) angelegten Signalen umfasst; - einen Komplementärdifferenzverstärker (86), der elektrisch mit dem Eingangsanschluss (94) und dem Spiegelzweig (96) gekoppelt ist, wobei der Komplementärdifferenzverstärker (86) ein Paar von Differenzeingangstransistoren (Q1, Q2) und ein Paar von Komplementäreingangstransistoren (Q1P, Q2P) umfasst, wobei jeder der Komplementäreingangstransistoren (Q1P, Q2P) mit einem der Differenzeingangstransistoren (Q1, Q2) gekoppelt ist und 0°- und 180°-Ausgänge des Komplementärdifferenzverstärkers (86) definiert, und - einen Mittenabgriffkombinator (83, 84), der zwischen den Eingangsanschluss (94) und den Spiegelzweig (96) und die 0°- und 180°-Ausgänge gekoppelt ist. Der aktive Balun nach Anspruch 11, wobei die Differenzeingangstransistoren und die Komplementäreingangstransistoren je eine Basis, einen Emitter und einen Kollektor umfassen, wobei die Basis eines jeden der Komplementäreingangstransistoren an die Basis eines der Differenzeingangstransistoren angeschlossen ist. Der aktive Balun nach Anspruch 12, wobei die Kollektoren der Komplementäreingangstransistoren an den Kollektor eines der Differenzeingangstransistoren angeschlossen sind. Der aktive Balun nach Anspruch 13, wobei der Mittenabgriffkombinator ein Paar von Transistoren (Q3, Q4) und eine Stromquelle (I3) umfasst. Der aktive Balun nach Anspruch 13, wobei die Differenzeingangstransistoren und die Komplementäreingangstransistoren Hetero-Bipolartransistoren sind. Der aktive Balun nach Anspruch 11, wobei der aktive Balun derart ausgebildet ist, dass er monolithisch integriert ist.
Anspruch[en]
An active mixer comprising: - a first active balun (22) defining a first input port (28), a first output port (30) and first pair of balanced 0° and 180° outputs (32, 34); - a second active balun (24) defining a second input port (40), a second output port (42) and a second pair of balanced 0° and 180° outputs (44, 46); and - a diode ring (26) which includes four diodes (52, 54, 56, 58) electrically coupled to said first and second pairs balanced 0° and 180° outputs; wherein said first active balun (22) includes a first complementary differential amplifier (86) which includes a pair of first differential input transistors (Q1, Q2) and a pair of first complementary input transistors (Q1P, Q2P) and the outputs of the complementary differential amplifier are coupled each to a diode of the diode ring, said first active balun (22) further including a first input stage (90) which defines the input port (94) and a mirror stage (96), which mirrors the signals applied to said input port (94), said input stage (90) and mirror stage (96) being connected to said differential input transistors (Q1, Q2). The active mixer as recited in claim 1, wherein said second active balun (24) includes a second differential amplifier (86) which includes a second pair of differential input transistors (Q1, Q2) and a second pair of second complementary input transistors (Q1P, Q2P), said second active balun (24) further including a second input stage (90) which defines the input port (94) and a mirror stage (96) which mirrors the signals applied to said input port (94), said input stage (90) and mirror stage (96) being connected to said differential input transistors (Q1, Q2). The active mixer as recited in claim 1 or 2, wherein said diodes (52, 54, 56, 58) are Schottky diodes. The active mixer as recited in any one of claims 1 to 3, wherein said first differential input transistors (Q1, Q2) are heterojunction bipolar transistors. The active mixer as recited in any one of claims 1 to 4, wherein said complementary input transistors (Q1p, Q2p) are heterojunction bipolar transistors. The active mixer as recited in claim 1, wherein said first differential amplifier (86) defines a tail current and is configured to use substantially all of said tail current I1 to switch two of said diodes (52, 54, 56, 58) in said diode ring (26). The active mixer as recited in claim 2, wherein said second differential amplifier (90) defines a second tail current I2 and said second differential amplifier (90) is configured to use substantially all of said tail current I2 to switch the other two of said diodes (52, 54, 56, 58) in said diode ring (26). The active mixer as recited in any one of claims 2 to 7, wherein said second differential amplifier (90) is a complementary differential amplifier which includes the pair of differential input transistors (Q1, Q2) and the pair of complementary input transistors (Q1P, Q2P). The active mixer as recited in claim 1, wherein said differential input and complementary input transistors (Q1P, Q2P) each have base, collector and emitter, wherein the bases and collectors of each of said differential input and complementary input transistors are connected together. The active mixer as recited in claim 2, wherein said differential input and complementary input transistors (Q1P, Q2P) each have base, collector and emitter, wherein the bases and collectors of each of said differential input and complementary input transistors are connected together. An active balun comprising: - an input stage (100) which includes an input port (94) and a mirror leg (96) for mirroring signals applied to said input port (94); - a complementary differential amplifier (86) electrically coupled to said input port (94) and said mirror leg (96), said complementary differential amplifier (86) including a pair of differential input transistors (Q1, Q2) and a pair of complementary input transistors (Q1p, Q2p), each of said complementary input transistors (Q1p, Q2p) being coupled to one of said differential input transistors (Q1, Q2) and defining 0° and 180° outputs of the complementary differential amplifier (86), and - a center tap combiner (83, 84) coupled between said input port (94) and mirror leg (96) and 0° and 180° outputs. The active balun as recited in claim 11, wherein said differential input and complementary input transistors each include a base, emitter and collector, wherein the base of each of said complementary input transistors is connected to the base of one of said differential input transistors. The active balun as recited in claim 12, wherein the collectors of said complementary input transistors are connected to the collector of one of said differential input transistors. The active balun as recited in claim 13, wherein said center tap combiner includes a pair of transistors (Q3, Q4) and a current source (I3). The active balun as recited in claim 13, wherein said differential input and complementary input transistors are heterojunction bipolar transistors. The active balun as recited in claim 11, wherein said active balun is adapted to be monolithically integrated.
Anspruch[fr]
Mélangeur actif comprenant : - un premier symétriseur actif (22) définissant un premier port d'entrée (28), un premier port de sortie (30) et une première paire de sorties (32, 34) équilibrées à 0° et 180° ; - un deuxième symétriseur actif (24) définissant un deuxième port d'entrée (40), un deuxième port de sortie (42) et une deuxième paire de sorties (44, 46) équilibrées à 0° et 180° ; et - un anneau (26) de diodes qui comporte quatre diodes (52, 54, 56, 58) couplées électriquement auxdites première et deuxième paires de sorties équilibrées à 0° et 180°; dans lequel ledit premier symétriseur actif (22) comprend un premier amplificateur différentiel complémentaire (86) qui comprend une paire de premiers transistors différentiels (Q1, Q2) d'entrée et une paire de premiers transistors complémentaires (Q1P, Q2P) d'entrée et dans lequel les sorties de l'amplificateur différentiel complémentaire sont chacune couplées à une diode de l'anneau de diodes, ledit premier symétriseur actif (22) comprenant en outre un premier étage d'entrée (90) qui définit le port d'entrée (94) et un étage de miroir (96), qui reflète les signaux appliqués audit port d'entrée (94), lesdits étage d'entrée (90) et étage (96) de miroir étant connectés auxdits transistors différentiels (Q1, Q2) d'entrée. Mélangeur actif selon la revendication 1, dans lequel le deuxième symétriseur actif (24) comprend un deuxième amplificateur différentiel (86) qui comprend une deuxième paire de transistors différentiels (Q1, Q2) d'entrée et une deuxième paire de deuxièmes transistors différentiels (Q1P, Q2P) d'entrée, ledit deuxième symétriseur actif (24) comprenant en outre un deuxième étage d'entrée (90) qui définit le port d'entrée (94) et un étage de miroir (96) qui reflète les signaux appliqués audit port d'entrée (94), lesdits étage (90) d'entrée et étage (96) de miroir étant connectés auxdits transistors différentiels (Q1, Q2) d'entrée. Mélangeur actif selon la revendication 1 ou 2, dans lequel lesdites diodes (52, 54, 56, 58) sont des diodes Schottky. Mélangeur actif selon l'une quelconque des revendications 1 à 3, dans lequel lesdits premiers transistors différentiels (Q1, Q2) d'entrée sont des transistors bipolaires à hétérojonction. Mélangeur actif selon l'une quelconque des revendications 1 à 4, dans lequel lesdits transistors complémentaires (Q1P, Q2P) d'entrée sont des transistors bipolaires à hétérojonction. Mélangeur actif selon la revendication 1, dans lequel ledit premier amplificateur différentiel (86) définit un courant résiduel et est configuré de manière à utiliser sensiblement tous lesdits courants résiduels I1 pour commuter deux desdites diodes (52, 54, 56, 58) dans ledit anneau (26) de diodes. Mélangeur actif selon la revendication 2, dans lequel ledit deuxième amplificateur différentiel (90) définit un deuxième courant résiduel I2 et ledit deuxième amplificateur différentiel (90) est configuré de manière à utiliser sensiblement tous lesdits courants résiduels I2 pour commuter les autres deux desdites diodes (52, 54, 56, 58) dans ledit anneau (26) de diodes. Mélangeur actif selon l'une quelconque des revendications 2 à 7, dans lequel ledit deuxième amplificateur différentiel (90) est un amplificateur différentiel complémentaire qui comprend la paire de transistors différentiels (Q1, Q2) d'entrée et la paire de transistors complémentaires (Q1P, Q2P) d'entrée. Mélangeur actif selon la revendication 1, dans lequel lesdits transistors différentiels d'entrée et complémentaires (Q1P, Q2P) d'entrée ont chacun une base, un collecteur et des émetteurs, dans lequel les bases et les collecteurs de chacun desdits transistors différentiels d'entrée et transistors complémentaires d'entrée sont connectés ensemble. Mélangeur actif selon la revendication 2, dans lequel lesdits transistors différentiels d'entrée et complémentaires (Q1P, Q2P) d'entrée ont chacun une base, un collecteur et des émetteurs, dans lequel les bases et les collecteurs de chacun desdits transistors différentiels d'entrée et transistors complémentaires d'entrée sont connectés ensemble. Symétriseur actif comprenant : - un étage d'entrée (100) qui comprend un port d'entrée (94) et une branche (96) de miroir destinée à réfléchir les signaux appliqués audit port d'entrée (94) ; - un amplificateur différentiel complémentaire (86) couplé électriquement audit port d'entrée (94) et à ladite branche (96) de miroir, ledit amplificateur différentiel complémentaire (86) comprenant une paire de transistors différentiels (Q1, Q2) d'entrée et une paire de transistors complémentaires (Q1P, Q2P) d'entrée, chacun desdits de transistors complémentaires (Q1P, Q2P) d'entrée étant couplé à l'un desdits transistors différentiels (Q1, Q2) d'entrée et définissant des sorties à 0° et 180° de l'amplificateur différentiel complémentaire (86), et - un combinateur (83, 84) central à prise couplé entre lesdits port d'entrée (94) et branche (96) de miroir et les sorties à 0° et 180°. Symétriseur actif selon la revendication 11, dans lequel lesdits transistors différentiels d'entrée et complémentaires d'entrée comprennent chacun une base, un collecteur et un émetteur, dans lequel la base de chacun desdits transistors complémentaires d'entrée est reliée à la base de l'un desdits transistors différentiels d'entrée. Symétriseur actif selon la revendication 12, dans lequel les collecteurs desdits transistors complémentaires d'entrée sont connectés au collecteur de l'un desdits transistors différentiels d'entrée. Symétriseur actif selon la revendication 13, dans lequel ledit combinateur central à prise comprend une paire de transistors (Q3, Q4) et une source de courant (I3). Symétriseur actif selon la revendication 13, dans lequel lesdits transistors différentiels d'entrée et complémentaires d'entrée sont des transistors bipolaires à hétérojonction. Symétriseur actif selon la revendication 11, dans lequel ledit symétriseur actif est adapté à être intégré de manière monolithique.






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